Epitaxial Wafers on GaAs Substrate

QDLaser markets high-quality epitaxial wafers on GaAs substrates, grown by molecular beam epitaxy (MBE), for various photonic and electronic devices. These wafers can be customized to meet customers’ specific demands. The quantum dot wafers apply world-leading quantum dot technology in data communication lasers proven to have minimal temperature dependence and in lasers that operate in high-temperature environments over 200°C. The growable layers are comprised of InAs quantum dot, InGaAs quantum well, GaAs, or AlGaAs on GaAs substrate.

QLxxx7x Series: High quality epitaxial wafer

QLF1374 Series: Quantum dot epitaxial wafer

Fiber/Connector type

QLD1x6x-xxxx: Polarization maintaining fiber 900umFC/APC

QLD1x6x-xxxx-11: Polarization maintaining fiber 250umAPC ferrule